Buyer Name: University of Strathclyde
Buyer Address: Learning & Teaching Building, 49 Richmond Street, Glasgow, UKM82, G1 1XU, United Kingdom
Contact Name: Natasha Murray
Contact Email: natasha.murray@strath.ac.uk
Buyer Name: University of Strathclyde
Buyer Address: Learning & Teaching Building, 49 Richmond Street, Glasgow, UKM82, G1 1XU, United Kingdom
Contact Name: Natasha Murray
Contact Email: natasha.murray@strath.ac.uk
This Notice relates to an open tender above the Agreement on Government Procurement (GPA) threshold for goods related to research and development equipment required by the University of Strathclyde's (Contracting Authority) Institute of Photonics department. The Contracting Authority envisions a single supplier shall undertake the contract for the supply, delivery, installation and commissioning of an Inductively Coupled Plasma Etcher system at a University of Strathclyde Lab facility, located in the Technology and Innovation Centre (TIC) specified cleanroom. The equipment is grant funded by the Wolfson Foundation to advance scientific investigation in neuro-technology.
No linked documents found for this notice.
Lot Description: The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Inductively Coupled Plasma Etcher system The Technical Team envision that the equipment will process semiconductor materials that will include but not be limited to: 1 Gallium Nitride (GaN) light-emitting diodes 2 Silicon (Si) passive and active devices The equipment will be used to advance scientific investigation in neuro-technology and operated by PhD students, Postdoctoral Research Associates and Technicians within the Institute of Photonics. The Contracting Authority anticipates that the contract will be for a duration of twenty (24) months. The Contracting Authority requires a supplier that can fulfil the below non-exhaustive list of requirements: 1 Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) mode of operation to plasma etch hard materials such as GaN at etch rate of >500nm/min 2 Deep Silicon Etching (DSE) mode of operation to plasma etch high aspect ratio and high-density structures in Silicon at etch rate of >1000nm/min 3 These two modes of operation co-existing within the same equipment within a minimal footprint 4 Low-maintenance, especially with the provision of servicing-free high vacuum pumping systems (magnetic-levitated turbo molecular pump) Please refer to the full technical and tender information available in the Public Contracts Scotland-Tender.
Lot 1 Status: cancelled
Lot 1 Has Options: Yes
Lot 1 Options: The Contracting Authority reserves the right to request additional deliveries by the successful Tenderer, either intended as partial replacement of supplies or installations or as extensions of existing supplies and installations. The Contracting Authority may at it's sole discretion exercise this option.
Lot 1 Award Criterion (quality): Quality
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